Samsung Semiconductor K4T51163QG-HCF7000
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K4T51163QG-HCF7000
2107-K4T51163QG-HCF7000
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K4T51163QG-HCF7000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K4T51163QG-HCF7000详情
Samsung Semiconductor K4T51163QG-HCF7000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
84
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
800
Maximum Access Time (ns)
0.45
Address Bus Width (bit)
16
Interface Type
SSTL_18
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
165
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Width
9
Package Length
13
PCB changed
84
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
Tray
零件状态
Obsolete
组织结构
32Mx16
K4T51163QG-HCF7000拓展信息
Samsung
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Samsung
Samsung
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Samsung
Samsung
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Samsung
Samsung Semiconductor







哦! 它是空的。