Samsung Semiconductor K4T51163QI-HIE6000

引脚数

84

ECCN (US)

EAR99

Automotive

无

PPAP

无

DRAM Type

DDR2 SDRAM

Chip Density (bit)

512M

Number of Internal Banks

4

Number of Words per Bank

8M

Number of Bits/Word (bit)

16

Data Bus Width (bit)

16

Maximum Clock Rate (MHz)

667

Maximum Access Time (ns)

0.45

Address Bus Width (bit)

15

Interface Type

SSTL_1.8

Minimum Operating Supply Voltage (V)

1.7

Typical Operating Supply Voltage (V)

1.8

Maximum Operating Supply Voltage (V)

1.9

Operating Current (mA)

115

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

95

Supplier Temperature Grade

Industrial

Number of I/O Lines (bit)

16

Mounting

表面贴装

Package Width

7.5

Package Length

12.5

PCB changed

84

Standard Package Name

BGA

Supplier Package

FBGA

Lead Shape

Ball

包装

Tray

零件状态

Obsolete

组织结构

32Mx16