Samsung Semiconductor K4T51163QN-BIE700
- 收藏
- 对比
K4T51163QN-BIE700
2107-K4T51163QN-BIE700
存储器
--
大陆
立即发货

K4T51163QN-BIE700 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K4T51163QN-BIE700详情
Samsung Semiconductor K4T51163QN-BIE700重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
DDR2 SDRAM
Chip Density (bit)
512M
Number of Internal Banks
4
Number of Words per Bank
8M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
667
Supplier Package
FBGA
PCB changed
84
Package Length
12.5
Package Width
7.5
Package Height
0.53
Mounting
表面贴装
Number of I/O Lines (bit)
16
Supplier Temperature Grade
Industrial
Maximum Operating Temperature (°C)
95
Minimum Operating Temperature (°C)
-40
Operating Current (mA)
70
Maximum Operating Supply Voltage (V)
1.9
Typical Operating Supply Voltage (V)
1.8
Minimum Operating Supply Voltage (V)
1.7
Interface Type
SSTL_1.8
Address Bus Width (bit)
15
Maximum Access Time (ns)
0.45
零件状态
活跃
引脚数量
84
组织结构
32Mx16
K4T51163QN-BIE700拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。