Samsung Semiconductor K6F4016U6E-EF70T00
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K6F4016U6E-EF70T00
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K6F4016U6E-EF70T00 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K6F4016U6E-EF70T00详情
Samsung Semiconductor K6F4016U6E-EF70T00重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
不合规
ECCN (US)
3A991.b.2.a
Automotive
无
PPAP
无
Chip Density (bit)
4M
Number of Words
256K
Number of Bits/Word (bit)
16
Data Rate Architecture
SDR
Address Bus Width (bit)
18
Timing Type
Asynchronous
Max. Access Time (ns)
70
Minimum Operating Supply Voltage (V)
2.7
Typical Operating Supply Voltage (V)
3
Maximum Operating Supply Voltage (V)
3.3
Operating Current (mA)
22
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
Mounting
表面贴装
Package Height
0.58
Package Width
6
Package Length
7
PCB changed
48
Standard Package Name
BGA
Supplier Package
TBGA
Lead Shape
Ball
包装
卷带
零件状态
Obsolete
引脚数量
48
端口的数量
1
K6F4016U6E-EF70T00拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。