Samsung Semiconductor K6R4016V1D-EI10000
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K6R4016V1D-EI10000
2107-K6R4016V1D-EI10000
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K6R4016V1D-EI10000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K6R4016V1D-EI10000详情
Samsung Semiconductor K6R4016V1D-EI10000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
48
EU RoHS
不合规
ECCN (US)
3A991.b.2.a
Automotive
无
PPAP
无
Chip Density (bit)
4M
Number of Words
256K
Number of Bits/Word (bit)
16
Data Rate Architecture
SDR
Address Bus Width (bit)
18
Timing Type
Asynchronous
Max. Access Time (ns)
10
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
75
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
Mounting
表面贴装
Package Height
0.55
Package Width
7
Package Length
9
PCB changed
48
Standard Package Name
BGA
Supplier Package
TBGA
Lead Shape
Ball
包装
Tray
零件状态
Obsolete
端口的数量
1
K6R4016V1D-EI10000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
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Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。