Samsung Semiconductor K6T0808C1D-GL55000
- 收藏
- 对比
K6T0808C1D-GL55000
2107-K6T0808C1D-GL55000
存储器
--
大陆
立即发货

K6T0808C1D-GL55000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K6T0808C1D-GL55000详情
Samsung Semiconductor K6T0808C1D-GL55000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
引脚数
28
EU RoHS
不合规
ECCN (US)
EAR99
Automotive
无
PPAP
无
Chip Density (bit)
256K
Number of Words
32K
Number of Bits/Word (bit)
8
Data Rate Architecture
SDR
Address Bus Width (bit)
15
Timing Type
Asynchronous
Max. Access Time (ns)
55
Minimum Operating Supply Voltage (V)
4.5
Typical Operating Supply Voltage (V)
5
Maximum Operating Supply Voltage (V)
5.5
Operating Current (mA)
60
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Height
2.59
Package Width
8.38
Package Length
18.69(Max)
PCB changed
28
Standard Package Name
SOP
Supplier Package
SOP
Lead Shape
Gull-wing
包装
Tray
零件状态
Obsolete
端口的数量
1
K6T0808C1D-GL55000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。