Samsung Semiconductor K6T1008C2E-TB55000
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K6T1008C2E-TB55000
2107-K6T1008C2E-TB55000
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K6T1008C2E-TB55000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
1最小包装量--
K6T1008C2E-TB55000详情
Samsung Semiconductor K6T1008C2E-TB55000重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
32
EU RoHS
不合规
ECCN (US)
EAR99
Automotive
无
PPAP
无
Chip Density (bit)
1M
Number of Words
128K
Number of Bits/Word (bit)
8
Data Rate Architecture
SDR
Address Bus Width (bit)
17
Timing Type
Asynchronous
Max. Access Time (ns)
55
Process Technology
CMOS
Minimum Operating Supply Voltage (V)
4.5
Typical Operating Supply Voltage (V)
5
Maximum Operating Supply Voltage (V)
5.5
Operating Current (mA)
50
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Height
1
Package Width
18.4
Package Length
8.4(Max)
PCB changed
32
Standard Package Name
SOP
Supplier Package
TSOP-I
Lead Shape
Gull-wing
包装
Tray
零件状态
Obsolete
端口的数量
1
K6T1008C2E-TB55000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。