Samsung Semiconductor K7R641884M-EC25000
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K7R641884M-EC25000
2107-K7R641884M-EC25000
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K7R641884M-EC25000 datasheet pdf and Memory product details from Samsung Semiconductor stock available at utmel
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K7R641884M-EC25000详情
Samsung Semiconductor K7R641884M-EC25000重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
3A991.b.2.a
Automotive
无
PPAP
无
Chip Density (bit)
72M
Number of Words
4M
Number of Bits/Word (bit)
18
Data Rate Architecture
QDR
Address Bus Width (bit)
20
Timing Type
Synchronous
Max. Access Time (ns)
0.45
Maximum Clock Rate (MHz)
250
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
800
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Height
0.95
Package Width
15
Package Length
17
PCB changed
165
Standard Package Name
BGA
Supplier Package
FBGA
Lead Shape
Ball
包装
Tray
零件状态
Obsolete
引脚数量
165
端口的数量
2
建筑学
Pipelined
K7R641884M-EC25000拓展信息
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung
Samsung Semiconductor







哦! 它是空的。