Samsung Semiconductor KLMBG2JETD-B0410
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KLMBG2JETD-B0410
2107-KLMBG2JETD-B0410
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KLMBG2JETD-B0410 datasheet pdf and USB Flash Drives product details from Samsung Semiconductor stock available at utmel
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KLMBG2JETD-B0410详情
Samsung Semiconductor KLMBG2JETD-B0410重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
153
EU RoHS
Compliant
ECCN (US)
3A991.b.1.a
HTS
8542.32.00.71
Automotive
无
PPAP
无
Cell Type
MLC NAND
Chip Density (bit)
256G
Programmability
有
Timing Type
Synchronous
Interface Type
Serial e-MMC
Minimum Operating Supply Voltage (V)
1.7|2.7
Typical Operating Supply Voltage (V)
1.8|3.3
Maximum Operating Supply Voltage (V)
1.95|3.6
Command Compatible
无
ECC Support
无
Support of Page Mode
无
Package Description
FBGA-153
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Number of Words Code
32000000000
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-25 °C
Operating Temperature-Max
85 °C
Manufacturer Part Number
KLMBG2JETD-B0410
Clock Frequency-Max (fCLK)
200 MHz
Number of Words
34359738368 words
Supply Voltage-Nom (Vsup)
1.8 V
Package Code
VFBGA
Package Shape
RECTANGULAR
Manufacturer
三星半导体
Part Life Cycle Code
活跃
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Risk Rank
5.79
零件状态
Unconfirmed
类型
MLC NAND TYPE
附加功能
ALSO OPERATES @ 3V SUP NOM
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
功能数量
1
端子间距
0.5 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B153
电源电压-最大值(Vsup)
1.95 V
温度等级
OTHER
电源电压-最小值(Vsup)
1.7 V
操作模式
SYNCHRONOUS
建筑学
Sectored
组织结构
32GX8
座位高度-最大
0.8 mm
内存宽度
8
记忆密度
274877906944 bit
并行/串行
PARALLEL
内存IC类型
FLASH
编程电压
1.8 V
引导模块
无
宽度
11.5 mm
长度
13 mm
KLMBG2JETD-B0410拓展信息
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor







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