Samsung Semiconductor KLMCG4JETD-B0410

表面安装

YES

终端数量

153

EU RoHS

Compliant

ECCN (US)

3A991.b.1.a

HTS

8542.32.00.71

Automotive

无

PPAP

无

Cell Type

NAND

Chip Density (bit)

512G

Number of Bits/Word (bit)

1/4/8

Number of Words

512G/128G/64G

Programmability

有

Timing Type

Synchronous

Maximum Erase Time (S)

0.02

Interface Type

Serial e-MMC

Minimum Operating Supply Voltage (V)

1.7|2.7

Maximum Operating Frequency (MHz)

200

Typical Operating Supply Voltage (V)

1.8|3.3

Maximum Operating Supply Voltage (V)

1.95|3.6

Minimum Operating Temperature (°C)

-25

Maximum Operating Temperature (°C)

85

Command Compatible

有

ECC Support

有

Support of Page Mode

无

Mounting

表面贴装

Package Height

0.71

Package Width

11.5

Package Length

13

PCB changed

153

Standard Package Name

BGA

Supplier Package

FBGA

Lead Shape

Ball

Package Description

VFBGA,

Package Style

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Number of Words Code

64000000000

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-25 °C

Operating Temperature-Max

85 °C

Manufacturer Part Number

KLMCG4JETD-B0410

Clock Frequency-Max (fCLK)

200 MHz

Supply Voltage-Nom (Vsup)

1.8 V

Package Code

VFBGA

Package Shape

RECTANGULAR

Manufacturer

三星半导体

Part Life Cycle Code

活跃

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

Risk Rank

5.79

零件状态

活跃

类型

MLC NAND TYPE

附加功能

ALSO OPERATES @ 3V SUP NOM

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

功能数量

1

端子间距

0.5 mm

Reach合规守则

compliant

引脚数量

153

JESD-30代码

R-PBGA-B153

电源电压-最大值(Vsup)

1.95 V

温度等级

OTHER

电源电压-最小值(Vsup)

1.7 V

操作模式

SYNCHRONOUS

组织结构

64GX8

座位高度-最大

1 mm

内存宽度

8

记忆密度

549755813888 bit

并行/串行

PARALLEL

内存IC类型

FLASH

编程电压

1.8 V

引导模块

有

宽度

11.5 mm

长度

13 mm