Samsung Semiconductor KLMDG8JENB-B0410
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KLMDG8JENB-B0410
2107-KLMDG8JENB-B0410
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KLMDG8JENB-B0410 datasheet pdf and USB Flash Drives product details from Samsung Semiconductor stock available at utmel
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KLMDG8JENB-B0410详情
Samsung Semiconductor KLMDG8JENB-B0410重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
153
HTS
8542.32.00.71
Automotive
无
PPAP
无
Chip Density (bit)
1T
Timing Type
Synchronous
Interface Type
Serial e-MMC
Minimum Operating Supply Voltage (V)
1.7|2.7
Typical Operating Supply Voltage (V)
1.8|3.3
Maximum Operating Supply Voltage (V)
1.95|3.6
Package Height
1
Package Width
11.5
Package Length
13
Package Description
FBGA-153
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Number of Words Code
128000000000
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-25 °C
Operating Temperature-Max
85 °C
Manufacturer Part Number
KLMDG8JENB-B0410
Clock Frequency-Max (fCLK)
200 MHz
Number of Words
137438953472 words
Supply Voltage-Nom (Vsup)
1.8 V
Package Code
TFBGA
Package Shape
RECTANGULAR
Manufacturer
三星半导体
Part Life Cycle Code
活跃
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Risk Rank
5.78
零件状态
Unconfirmed
类型
MLC NAND TYPE
技术
CMOS
端子位置
BOTTOM
终端形式
BALL
功能数量
1
端子间距
0.5 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B153
电源电压-最大值(Vsup)
1.95 V
温度等级
OTHER
电源电压-最小值(Vsup)
1.7 V
操作模式
SYNCHRONOUS
组织结构
128GX8
座位高度-最大
1.2 mm
内存宽度
8
记忆密度
1099511627776 bit
并行/串行
PARALLEL
内存IC类型
FLASH
编程电压
1.8 V
宽度
11.5 mm
长度
13 mm
KLMDG8JENB-B0410拓展信息
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor
Samsung Semiconductor







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