STMicroelectronics E53NA50
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E53NA50
2381-E53NA50
晶体管 - FET,MOSFET - 单个
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N Channel Enhancement Mode Fast Power Mos Transistor
--最小包装量--
E53NA50详情
STMicroelectronics E53NA50重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Type of control element
Long turning handle
Rated permanent current Iu
630
Cable entry
Side
Degree of protection (IP), front side
IP40
Type of electrical connection of main circuit
Screw connection
RoHS
Non-Compliant
Turn Off Delay Time
105 ns
最高工作温度
150 °C
通道数量
1
功率耗散
460 W
接通延迟时间
57 ns
漏源电压 (Vdss)
500 V
连续放电电流(ID)
53 A
栅极至源极电压(Vgs)
30 V
漏源击穿电压
500 V
最大结点温度(Tj)
150 °C
漏源电阻
75 mΩ
高度
12.2 mm
E53NA50拓展信息
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