STMicroelectronics SCT040H65G3AG

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

H2PAK-7

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Power Dissipation (Max)

221W (Tc)

Package Type

H2PAK-7

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.2 V

Qualification

AEC-Q101

Pd - Power Dissipation

221 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

39.5 nC

Rds On - Drain-Source Resistance

40 mOhms

RoHS

Details

Id - Continuous Drain Current

30 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

7

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

55mOhm @ 20A, 18V

不同 Id 时 Vgs(th)（最大值）

4.2V @ 1mA

输入电容(Ciss)(Max)@Vds

920 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

39.5 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+18V, -5V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品

MOSFET

产品类别

MOSFET