STMicroelectronics SCT30N120H
- 收藏
- 对比
SCT30N120H
2381-SCT30N120H
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

PTD WBG & POWER RF
--最小包装量--
SCT30N120H详情
STMicroelectronics SCT30N120H重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
Current - Continuous Drain (Id) @ 25℃
40A Tc
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
270W Tc
操作温度
-55°C~200°C TJ
包装
Tape & Reel (TR)
零件状态
活跃
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
100m Ω @ 20A, 20V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 1mA
输入电容(Ciss)(Max)@Vds
1700pF @ 400V
门极电荷(Qg)(最大)@Vgs
105nC @ 20V
漏源电压 (Vdss)
1200V
Vgs(最大值)
+25V, -10V
SCT30N120H拓展信息
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics
STMicroelectronics







哦! 它是空的。