STMicroelectronics SCTH60N120G2-7

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

H2PAK-7

厂商

STMicroelectronics

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

390W (Tc)

Number of Elements per Chip

1

Package Type

H2PAK-7

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Continuous Drain Current Id

60A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

390 W

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

94 nC

Rds On - Drain-Source Resistance

52 mOhms

RoHS

Details

Typical Turn-Off Delay Time

32 ns

Id - Continuous Drain Current

60 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

Reel

子类别

MOSFETs

引脚数量

7

配置

Single

通道数量

1 Channel

功率耗散

390W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

52mOhm @ 30A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1969 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

94 nC @ 18 V

上升时间

15 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET