STMicroelectronics SCTH70N120G2V-7

安装类型

表面贴装

包装/外壳

H2PAK-7

供应商器件包装

H2PAK-7

Continuous Drain Current Id

90

Continuous Drain Current

90(A)

Drain-Source On-Volt

1200(V)

Operating Temperature Classification

Military

Package Type

H2PAK

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

22(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

MSL 1 - Unlimited

Number of Elements per Chip

1

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

4.9 V

Pd - Power Dissipation

469 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

0.051147 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

150 nC

Rds On - Drain-Source Resistance

21 mOhms

RoHS

Details

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

90 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

STMicroelectronics

Power Dissipation (Max)

469W (Tc)

Product Status

活跃

系列

SCTH70N

包装

MouseReel

操作温度

-55°C ~ 175°C (TJ)

类型

功率MOSFET

子类别

MOSFETs

技术

SiC

引脚数量

7 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

469

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

30mOhm @ 50A, 18V

不同 Id 时 Vgs(th)（最大值）

4.9V @ 1mA

输入电容(Ciss)(Max)@Vds

3540 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

150 nC @ 18 V

上升时间

9.5 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET