STMicroelectronics SCTL90N65G2V

安装类型

表面贴装

包装/外壳

8-PowerVDFN

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

935W (Tc)

Continuous Drain Current Id

40

MSL

MSL 3 - 168 hours

Number of Elements per Chip

1

Package Type

PowerFLAT 8 x 8 HV

Vds - Drain-Source Breakdown Voltage

650 V

Moisture Sensitive

有

Typical Turn-On Delay Time

26 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

935 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

0.006349 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

157 nC

Rds On - Drain-Source Resistance

18 mOhms

RoHS

Details

Typical Turn-Off Delay Time

58 ns

Id - Continuous Drain Current

40 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

5

配置

Single

通道数量

1 Channel

功率耗散

935

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

24mOhm @ 40A, 18V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

3380 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

157 nC @ 18 V

上升时间

38 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET