STMicroelectronics SCTW40N120G2V

安装类型

通孔

包装/外壳

HiP-247-3

供应商器件包装

HiP247™

Continuous Drain Current Id

36

Number of Elements per Chip

1

Package Type

HiP247

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

13.4 ns

Vgs th - Gate-Source Threshold Voltage

4.9 V

Pd - Power Dissipation

278 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

61 nC

Rds On - Drain-Source Resistance

100 mOhms

RoHS

Details

Typical Turn-Off Delay Time

22 ns

Id - Continuous Drain Current

36 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

STMicroelectronics

Power Dissipation (Max)

278W (Tc)

Product Status

活跃

系列

SCTW40N

包装

Tube

操作温度

-55°C ~ 200°C (TJ)

子类别

MOSFETs

技术

SiC

引脚数量

3

通道数量

1 Channel

功率耗散

278

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 20A, 18V

不同 Id 时 Vgs(th)（最大值）

4.9V @ 1mA

输入电容(Ciss)(Max)@Vds

1233 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

61 nC @ 18 V

上升时间

10.3 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET