STMicroelectronics SCTWA35N65G2V

安装类型

通孔

包装/外壳

HiP-247-3

供应商器件包装

TO-247 Long Leads

Continuous Drain Current Id

45

Continuous Drain Current

45(A)

Drain-Source On-Volt

650(V)

Operating Temperature Classification

Military

Package Type

TO-247

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

22(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

Number of Elements per Chip

1

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

240 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Unit Weight

0.215171 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

73 nC

Rds On - Drain-Source Resistance

67 mOhms

RoHS

Details

Id - Continuous Drain Current

45 A

Package

Tube

Base Product Number

SCTWA35

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

厂商

STMicroelectronics

Power Dissipation (Max)

208W (Tc)

Product Status

活跃

包装

Rail/Tube

系列

SCTWA35N65G2V

操作温度

-55°C ~ 175°C (TJ)

类型

功率MOSFET

子类别

MOSFETs

技术

SiC

引脚数量

3 +Tab

极性

N

通道数量

1 Channel

功率耗散

208

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

72mOhm @ 20A, 20V

不同 Id 时 Vgs(th)（最大值）

3.2V @ 1mA

输入电容(Ciss)(Max)@Vds

73000 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 20 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+20V, -5V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET