STMicroelectronics SCTWA35N65G2V-4

安装类型

通孔

包装/外壳

TO-247-4

引脚数

4

供应商器件包装

TO-247-4

Continuous Drain Current Id

45

Package

Bulk

Base Product Number

SCTWA35

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

厂商

STMicroelectronics

Power Dissipation (Max)

240W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 1mA

Number of Elements per Chip

1

Package Type

HiP247-4

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

240 W

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

73 nC

Rds On - Drain-Source Resistance

67 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

45 A

操作温度

-55°C ~ 200°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

功率耗散

240

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

67mOhm @ 20A, 20V

输入电容(Ciss)(Max)@Vds

1370 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 20 V

上升时间

9 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+18V, -5V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET