STMicroelectronics SCTWA35N65G2VAG

包装/外壳

HiP-247-3

安装类型

通孔

供应商器件包装

TO-247 Long Leads

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

45 A

Rds On - Drain-Source Resistance

67 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

5 V

Qg - Gate Charge

73 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 200 C

Pd - Power Dissipation

240 W

Channel Mode

Enhancement

Qualification

AEC-Q100

Factory Pack QuantityFactory Pack Quantity

600

Package

Tube

Base Product Number

SCTWA35

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V, 20V

厂商

STMicroelectronics

Power Dissipation (Max)

208W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

72mOhm @ 20A, 20V

不同 Id 时 Vgs(th)（最大值）

3.2V @ 1mA

输入电容(Ciss)(Max)@Vds

1370 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 20 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+20V, -5V

场效应管特性

-