STMicroelectronics SCTWA60N120G2-4

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

388W (Tc)

Package Type

HiP247-4

Continuous Drain Current Id

60A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

388 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

94 nC

Rds On - Drain-Source Resistance

52 mOhms

Id - Continuous Drain Current

60 A

系列

-

操作温度

-55°C ~ 200°C (TJ)

引脚数量

4

通道数量

1 Channel

功率耗散

389W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

52mOhm @ 30A, 18V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1969 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

94 nC @ 18 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

信道型

N通道

场效应管特性

-