STMicroelectronics SCTWA90N65G2V

包装/外壳

HiP-247-3

安装类型

通孔

供应商器件包装

TO-247 Long Leads

Continuous Drain Current Id

119

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

26 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

565 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

157 nC

Rds On - Drain-Source Resistance

24 mOhms

RoHS

Details

Typical Turn-Off Delay Time

58 ns

Id - Continuous Drain Current

119 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

119A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

STMicroelectronics

Power Dissipation (Max)

565W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 200°C (TJ)

系列

-

子类别

MOSFETs

技术

SiC

通道数量

1 Channel

功率耗散

565

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

24mOhm @ 50A, 18V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

3380 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

157 nC @ 18 V

上升时间

16 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET