STMicroelectronics SGT65R65AL
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SGT65R65AL
2381-SGT65R65AL
晶体管 - FET,MOSFET - 单个
8-PowerVDFN
大陆
立即发货

650 V, 49 MOHM TYP., 25 A, E-MOD
1最小包装量--
SGT65R65AL详情
STMicroelectronics SGT65R65AL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
PowerFlat™ (5x6) HV
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number
SGT65
Current - Continuous Drain (Id) @ 25℃
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V
厂商
STMicroelectronics
Power Dissipation (Max)
5W (Ta), 305W (Tc)
Product Status
活跃
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
GaNFET (Gallium Nitride)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
65mOhm @ 15A, 6V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 7mA
输入电容(Ciss)(Max)@Vds
286 pF @ 400 V
门极电荷(Qg)(最大)@Vgs
5.4 nC @ 6 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
+6V, -10V
场效应管特性
-
SGT65R65AL拓展信息
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