STMicroelectronics STB12N60DM2AG

包装/外壳

DPAK-3

安装类型

表面贴装

供应商器件包装

D²PAK (TO-263)

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

10 A

Rds On - Drain-Source Resistance

430 mOhms

Vgs th - Gate-Source Threshold Voltage

5 V

Qg - Gate Charge

14.5 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

125 W

Channel Mode

Enhancement

Qualification

AEC-Q100

Tradename

MDmesh

Fall Time

13 ns

Factory Pack QuantityFactory Pack Quantity

1000

Typical Turn-Off Delay Time

25 ns

Typical Turn-On Delay Time

11 ns

Continuous Drain Current Id

10

Package

Bulk

Base Product Number

STB12N

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

125W

Product Status

活跃

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

配置

Single

通道数量

1 Channel

功率耗散

125

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

430mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 250µA

输入电容(Ciss)(Max)@Vds

614 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

14.5 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±25V

晶体管类型

1-N Channel

信道型

N

场效应管特性

-