STMicroelectronics STB30N65DM6AG

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

D2PAK (TO-263)

厂商

STMicroelectronics

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

223W (Tc)

Continuous Drain Current Id

28

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

223 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.048678 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

46 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

115 mOhms

RoHS

Details

Typical Turn-Off Delay Time

46 ns

Id - Continuous Drain Current

18 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

223

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

115mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

2000 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

46 nC @ 10 V

上升时间

3.3 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET