STMicroelectronics STD11N60M6

包装/外壳

DPAK-3

安装类型

表面贴装

供应商器件包装

D-PAK (TO-252)

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

8 A

Rds On - Drain-Source Resistance

520 mOhms

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

4.75 V

Qg - Gate Charge

10.3 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

90 W

Channel Mode

Enhancement

Tradename

MDmesh

Fall Time

9.8 ns

Factory Pack QuantityFactory Pack Quantity

2500

Typical Turn-Off Delay Time

22 ns

Typical Turn-On Delay Time

7.4 ns

Unit Weight

0.012699 oz

Continuous Drain Current Id

8

Package

Bulk

Base Product Number

STD11

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

90W (Tc)

Product Status

活跃

Qualification

-

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

包装

切割胶带

操作温度

-55°C ~ 150°C (TJ)

系列

-

引脚数量

3

通道数量

1 Channel

功率耗散

90

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

520mOhm @ 4A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250µA

输入电容(Ciss)(Max)@Vds

387 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

10.3 nC @ 10 V

上升时间

7.2 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±25V

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-