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价格梯度
内地含税价
1
¥9.925531
10
¥9.363713
100
¥8.833685
500
¥8.333671
1000
¥7.861953
STMicroelectronics STD13N60M6
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- 对比
STD13N60M6
2381-STD13N60M6
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

Transistor MOSFET N-Channel 600V 10A 3-Pin D2PAK T/R
--最小包装量--
¥
总价: ¥
STD13N60M6详情
STMicroelectronics STD13N60M6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
D-PAK (TO-252)
Package
Bulk
厂商
PEI-Genesis
Product Status
活跃
Continuous Drain Current Id
10
Number of Elements per Chip
1
Package Type
DPAK (TO-252)
Channel Mode
Depletion
MSL
MSL 1 - Unlimited
Qualification
-
Factory Pack QuantityFactory Pack Quantity
2500
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
Tradename
MDmesh
RoHS
Details
Base Product Number
STD13
Current - Continuous Drain (Id) @ 25℃
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
92W (Tc)
系列
*
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
技术
Si
引脚数量
3
功率耗散
92
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
380mOhm @ 5A, 10V
不同 Id 时 Vgs(th)(最大值)
4.75V @ 250µA
输入电容(Ciss)(Max)@Vds
509 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
13 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±25V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET
STD13N60M6拓展信息
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