STMicroelectronics STD65N160M9

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

DPAK

Power Dissipation (Max)

106W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.2V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

17A (Tc)

Product Status

活跃

厂商

STMicroelectronics

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.2 V

Pd - Power Dissipation

106 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

32 nC

Rds On - Drain-Source Resistance

160 mOhms

RoHS

Details

Id - Continuous Drain Current

17 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

160mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1239 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

32 nC @ 10 V

上升时间

4 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET