STMicroelectronics STD9N60M6
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STD9N60M6
2381-STD9N60M6
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
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MOSFET N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFETComplete Your Design
--最小包装量--
STD9N60M6详情
STMicroelectronics STD9N60M6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
D-PAK (TO-252)
RoHS
Details
Tradename
MDmesh
Factory Pack QuantityFactory Pack Quantity
2500
Continuous Drain Current Id
6
Package
Bulk
Base Product Number
STD9
Current - Continuous Drain (Id) @ 25℃
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
STMicroelectronics
Power Dissipation (Max)
76W (Tc)
Product Status
活跃
Number of Elements per Chip
2
Package Type
DPAK (TO-252)
Channel Mode
Enhancement
MSL
MSL 1 - Unlimited
Qualification
-
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
MOSFET (Metal Oxide)
引脚数量
3
功率耗散
76
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
750mOhm @ 3A, 10V
不同 Id 时 Vgs(th)(最大值)
4.75V @ 250µA
输入电容(Ciss)(Max)@Vds
273 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
10 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±25V
信道型
N
场效应管特性
-
STD9N60M6拓展信息
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