STMicroelectronics STD9N65DM6AG
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STD9N65DM6AG
2381-STD9N65DM6AG
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
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MOSFET Automotive-grade N-channel 650 V, 365 mOhm typ 9 A MDmesh DM6 Power MOSFET in DPComplete Your Design
--最小包装量--
STD9N65DM6AG详情
STMicroelectronics STD9N65DM6AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
D-PAK (TO-252)
RoHS
Details
Qualification
AEC-Q100
Tradename
MDmesh
Factory Pack QuantityFactory Pack Quantity
2500
Continuous Drain Current Id
9
Package
Bulk
Base Product Number
STD9
Current - Continuous Drain (Id) @ 25℃
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
STMicroelectronics
Power Dissipation (Max)
89W (Tc)
Product Status
活跃
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
系列
Automotive, AEC-Q101
功率耗散
89
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
440mOhm @ 4.5A, 10V
不同 Id 时 Vgs(th)(最大值)
4.75V @ 250µA
输入电容(Ciss)(Max)@Vds
510 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
11.7 nC @ 10 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
±25V
信道型
N通道
场效应管特性
-
STD9N65DM6AG拓展信息
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