STMicroelectronics STH12N120K5-2AG

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件包装

H2Pak-2

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

STH12

Current - Continuous Drain (Id) @ 25℃

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

250W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

266 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

1.9 Ohms

Id - Continuous Drain Current

7 A

操作温度

-55°C ~ 150°C (TJ)

系列

MDmesh™ K5

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

690mOhm @ 6A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 100µA

输入电容(Ciss)(Max)@Vds

1370 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

44.2 nC @ 10 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

场效应管特性

-