STMicroelectronics STHU47N60DM6AG
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STHU47N60DM6AG
2381-STHU47N60DM6AG
晶体管 - FET,MOSFET - 单个
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
大陆
立即发货

AUTOMOTIVE-GRADE N-CHANNEL 600 V
1最小包装量--
STHU47N60DM6AG详情
STMicroelectronics STHU47N60DM6AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
供应商器件包装
HU3PAK
厂商
STMicroelectronics
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
250W (Tc)
Continuous Drain Current Id
36
Package Type
HU3PAK
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
4.75 V
Pd - Power Dissipation
250 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 25 V, + 25 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
600
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
Qg - Gate Charge
55 nC
Rds On - Drain-Source Resistance
80 Ohms
RoHS
Details
Id - Continuous Drain Current
36 A
系列
汽车
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
引脚数量
7
通道数量
1 Channel
功率耗散
250
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
80mOhm @ 18A, 10V
不同 Id 时 Vgs(th)(最大值)
4.75V @ 250μA
输入电容(Ciss)(Max)@Vds
2350 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
55 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±25V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品
MOSFET
产品类别
MOSFET
STHU47N60DM6AG拓展信息
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