STMicroelectronics STI33N60M6
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STI33N60M6
2381-STI33N60M6
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

MOSFET N-CH 600V 25A I2PAK
1最小包装量--
STI33N60M6详情
STMicroelectronics STI33N60M6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
供应商器件包装
I2PAK (TO-262)
厂商
STMicroelectronics
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4.75V @ 250μA
Power Dissipation (Max)
190W (Tc)
Base Product Number
STI33
Factory Pack QuantityFactory Pack Quantity
1000
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
Tradename
MDmesh
RoHS
Details
操作温度
-55°C ~ 150°C (TJ)
包装
Tube
子类别
MOSFETs
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
125mOhm @ 12.5A, 10V
输入电容(Ciss)(Max)@Vds
1515 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
33.4 nC @ 10 V
漏源电压 (Vdss)
600 V
Vgs(最大值)
±25V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
STI33N60M6拓展信息
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