STMicroelectronics STL7LN65K5AG

安装类型

表面贴装

包装/外壳

44-TSOP (0.400, 10.16mm Width)

供应商器件包装

44-TSOP II

Package

Tape & Reel (TR)

Base Product Number

CY7C1011

厂商

Infineon Technologies

Product Status

Discontinued at Digi-Key

Memory Types

Volatile

Continuous Drain Current Id

5

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

7.4 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Qualification

AEC-Q101

Pd - Power Dissipation

79 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.002681 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

11.7 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

1.15 Ohms

RoHS

Details

Typical Turn-Off Delay Time

19.8 ns

Id - Continuous Drain Current

5 A

Current - Continuous Drain (Id) @ 25℃

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

79W (Tc)

操作温度

-40°C ~ 85°C (TA)

系列

-

包装

MouseReel

子类别

MOSFETs

技术

SRAM - Asynchronous

电压 - 供电

3V ~ 3.6V

配置

Single

通道数量

1 Channel

内存大小

2Mbit

功率耗散

79

访问时间

10 ns

内存格式

SRAM

内存接口

Parallel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.5Ohm @ 2.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 100µA

输入电容(Ciss)(Max)@Vds

270 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

11.7 nC @ 10 V

上升时间

9.2 ns

漏源电压 (Vdss)

650 V

写入周期时间 - 字符、页面

10ns

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET

组织的记忆

128K x 16