STMicroelectronics STN6N60M2

安装类型

表面贴装

包装/外壳

TO-261-3

供应商器件包装

SOT-223-2

Continuous Drain Current Id

5.5

Number of Elements per Chip

1

Package Type

SOT-223

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

6 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.003880 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

6.2 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

1.2 Ohms

RoHS

Details

Id - Continuous Drain Current

5.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

STN6

Current - Continuous Drain (Id) @ 25℃

5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

6W (Tc)

Product Status

活跃

系列

STN6N60M2

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

3

通道数量

1 Channel

功率耗散

6

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.25Ohm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

220 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

6.2 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±25V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET