STMicroelectronics STP65N150M9

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

Package

Tube

Current - Continuous Drain (Id) @ 25℃

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

140W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.2V @ 250µA

Unit Weight

0.067021 oz

Factory Pack QuantityFactory Pack Quantity

1000

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

RoHS

Details

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

3.2 V

Pd - Power Dissipation

140 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

32 nC

Rds On - Drain-Source Resistance

150 mOhms

Id - Continuous Drain Current

20 A

操作温度

150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

150mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1239 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

32 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET