STMicroelectronics STP65N150M9

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

Package

Tube

Current - Continuous Drain (Id) @ 25℃

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

140W (Tc)

Product Status

活跃

Unit Weight

0.067021 oz

Factory Pack QuantityFactory Pack Quantity

1000

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

RoHS

Details

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

3.2 V

Pd - Power Dissipation

140 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

32 nC

Rds On - Drain-Source Resistance

150 mOhms

Id - Continuous Drain Current

20 A

操作温度

150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

150mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

4.2V @ 250µA

输入电容(Ciss)(Max)@Vds

1239 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

32 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET