STMicroelectronics STP80N450K6

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

100W (Tc)

Vds - Drain-Source Breakdown Voltage

800 V

Transistor Polarity

N-Channel

Unit Weight

0.067021 oz

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Rds On - Drain-Source Resistance

450 mOhms

RoHS

Details

Id - Continuous Drain Current

10 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

450mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 100μA

输入电容(Ciss)(Max)@Vds

700 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

17.3 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET