STMicroelectronics STW68N65DM6

安装类型

通孔

包装/外壳

Radial

供应商器件包装

TO-247-3

介电材料

Polypropylene (PP), Metallized

Lead Free Status / RoHS Status

--

Voltage Rating DC

--

Voltage Rating AC

310V

Continuous Drain Current Id

55

Package

Bulk

Base Product Number

STW68

Current - Continuous Drain (Id) @ 25℃

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

431W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

330 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

80 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

59 mOhms

RoHS

Details

Typical Turn-Off Delay Time

76 ns

Id - Continuous Drain Current

48 A

操作温度

-40°C ~ 110°C

系列

MKP

包装

Bulk

尺寸/尺寸

0.394 L x 0.197 W (10.00mm x 5.00mm)

容差

±10%

零件状态

活跃

湿度敏感性等级(MSL)

--

终端

PC引脚

应用

EMI, RFI Suppression

电容量

0.03µF

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

引线间距

0.295 (7.50mm)

通道数量

1 Channel

功率耗散

431

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

59mOhm @ 24A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250µA

输入电容(Ciss)(Max)@Vds

3528 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

上升时间

32 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

特征

--

产品类别

MOSFET

座位高度(最大)

0.406 (10.30mm)

评级结果

X2