STMicroelectronics STWA68N65DM6AG
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STWA68N65DM6AG
2381-STWA68N65DM6AG
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

MOSFET Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFETComplete Your Design
--最小包装量--
STWA68N65DM6AG详情
STMicroelectronics STWA68N65DM6AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247 Long Leads
RoHS
Details
Qualification
AEC-Q100
Tradename
MDmesh
Factory Pack QuantityFactory Pack Quantity
600
Continuous Drain Current Id
72
Package
Bulk
Base Product Number
STWA68
Current - Continuous Drain (Id) @ 25℃
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
STMicroelectronics
Power Dissipation (Max)
480W (Tc)
Product Status
活跃
Number of Elements per Chip
2
Package Type
TO-247
Channel Mode
Enhancement
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
Automotive, AEC-Q101
技术
MOSFET (Metal Oxide)
引脚数量
3
功率耗散
480
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
39mOhm @ 36A, 10V
不同 Id 时 Vgs(th)(最大值)
4.75V @ 250µA
输入电容(Ciss)(Max)@Vds
5900 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
118 nC @ 10 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
±25V
信道型
N
场效应管特性
-
STWA68N65DM6AG拓展信息
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