Toshiba RN1101MFV(TPL3)

安装类型

表面贴装

Number of Elements per Chip

1

Dimensions

1.2 x 0.8 x 0.5mm

Typical Resistor Ratio

1

Package Type

VESM

Maximum Operating Temperature

+150 °C

Typical Input Resistor

4.7 kΩ

Maximum Collector Emitter Voltage

50 V

Maximum DC Collector Current

100 mA

Pd - Power Dissipation

150 mW

Transistor Polarity

NPN

DC Collector/Base Gain hfe Min

30

Factory Pack QuantityFactory Pack Quantity

8000

Mounting Styles

SMD/SMT

Peak DC Collector Current

100 mA

Manufacturer

Toshiba

Brand

Toshiba

DC Current Gain hFE Max

30

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

系列

RN1101

包装

Reel

子类别

Transistors

引脚数量

3

配置

Single

产品类别

BJTs - Bipolar Transistors - Pre-Biased

晶体管类型

NPN

连续集电极电流

100 mA

产品类别

Bipolar Transistors - Pre-Biased