TT Electronics BDS20

包装/外壳

TO220M-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

35 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

1000 at 0.5 A, 3 V

Collector-Emitter Saturation Voltage

4 V

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Gain Bandwidth Product fT

8 MHz

Collector- Emitter Voltage VCEO Max

80 V

技术

Si

配置

Single

集电极基极电压(VCBO)

80 V