TT Electronics / Semelab D1017UK.02

材料

Si

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

70

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

30

Typical Input Capacitance @ Vds (pF)

360(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

10(Max)@28V

Typical Output Capacitance @ Vds (pF)

100(Max)@28V

Typical Forward Transconductance (S)

3.2(Min)

Maximum Power Dissipation (mW)

220000

Output Power (W)

150

Typical Power Gain (dB)

16(Min)

Maximum Frequency (MHz)

175

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

数据总线终端

Military

无

Mounting

Screw

Package Height

6.6

Package Length

24.76

Package Width

12.7

PCB changed

4

零件状态

活跃

引脚数量

4

配置

单双源

信道型

N

RoHS状态

符合RoHS标准