TT Electronics / Semelab D1029UK

包装/外壳

DR

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

70

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

35

Typical Input Capacitance @ Vds (pF)

420(Max)@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

17.5(Max)@28V

Typical Output Capacitance @ Vds (pF)

210(Max)@28V

Typical Forward Transconductance (S)

5.6(Min)

Maximum Power Dissipation (mW)

438000

Output Power (W)

350

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

200

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

65(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

DR型壳体

Military

无

Mounting

Screw

Package Height

5.08

Package Length

34.03

Package Width

10.16

PCB changed

5

Vds - Drain-Source Breakdown Voltage

70 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

35 A

零件状态

活跃

技术

Si

引脚数量

5

工作频率

175 MHz

配置

双共源

输出功率

350 W

增益

13 dB

信道型

N

RoHS状态

符合RoHS标准