TT Electronics / Semelab D2006UK

包装/外壳

DK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20(Min)

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

600

Typical Input Capacitance @ Vds (pF)

36(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.5(Max)@28V

Typical Output Capacitance @ Vds (pF)

18(Max)@28V

Typical Forward Transconductance (S)

0.54(Min)

Maximum Power Dissipation (mW)

70000

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

2000

Typical Drain Efficiency (%)

40

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

Case DK

Military

无

Mounting

Screw

Package Height

4.82

Package Length

24.76

Package Width

6.47

PCB changed

5

Vds - Drain-Source Breakdown Voltage

65 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

3 A

零件状态

活跃

技术

Si

引脚数量

5

工作频率

1 GHz

配置

双共源

输出功率

15 W

增益

13 dB

RoHS状态

符合RoHS标准