TT Electronics / Semelab D2007UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

70

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

2

Typical Input Capacitance @ Vds (pF)

20(Max)@0V

Maximum Power Dissipation (mW)

29000

Output Power (W)

5

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

500

Typical Drain Efficiency (%)

40(Min)

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Standard Package Name

DA型壳体

Supplier Package

DA型壳体

Military

无

Mounting

Screw

Package Height

6.6

Package Length

24.76

Package Width

9.52

PCB changed

4

零件状态

活跃

引脚数量

4

配置

单双源

RoHS状态

符合RoHS标准