TT Electronics / Semelab D2201UK

包装/外壳

DP

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

2

Typical Input Capacitance @ Vds (pF)

12(Max)@0V

Maximum Power Dissipation (mW)

17500

Output Power (W)

2.5

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Automotive

无

Standard Package Name

Module

Supplier Package

DP 外壳

Military

无

Mounting

Screw

Package Height

5.08

Package Length

18.92

Package Width

6.35

PCB changed

3

Vds - Drain-Source Breakdown Voltage

40 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

2 A

零件状态

活跃

技术

Si

引脚数量

3

工作频率

1 GHz

配置

Single

输出功率

2.5 W

增益

10 dB

信道型

N

RoHS状态

符合RoHS标准