TT Electronics / Semelab D2202UK

包装/外壳

DP

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

4

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

2000

Typical Input Capacitance @ Vds (pF)

24(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

2(Max)@12.5V

Typical Output Capacitance @ Vds (pF)

20(Max)@12.5V

Typical Forward Transconductance (S)

0.36(Min)

Maximum Power Dissipation (mW)

29000

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

2000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

Module

Supplier Package

DP 外壳

Military

无

Mounting

Screw

Package Height

5.08

Package Length

18.92

Package Width

6.35

PCB changed

3

Vds - Drain-Source Breakdown Voltage

40 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

4 A

零件状态

活跃

技术

Si

引脚数量

3

工作频率

1 GHz

配置

Single

输出功率

5 W

增益

10 dB

信道型

N

RoHS状态

符合RoHS标准