TT Electronics / Semelab D5030UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

125

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

24

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

8000

Typical Input Capacitance @ Vds (pF)

480(Max)@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

12(Max)@50V

Typical Output Capacitance @ Vds (pF)

200(Max)@50V

Typical Forward Transconductance (S)

6.4(Min)

Maximum Power Dissipation (mW)

583000

Typical Power Gain (dB)

16(Min)

Maximum Frequency (MHz)

250

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

DR型壳体

Military

无

Mounting

Screw

Package Height

5.08

Package Length

34.03

Package Width

10.16

PCB changed

5

零件状态

活跃

引脚数量

5

配置

双共源

RoHS状态

符合RoHS标准