UnitedSiC UF3C120080B7S

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

安装类型

表面贴装

供应商器件包装

D2PAK-7

Base Product Number

UF3C120080

Power Dissipation (Max)

190W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

6V @ 10mA

Current - Continuous Drain (Id) @ 25℃

28.8A (Tc)

Product Status

活跃

厂商

UnitedSiC

Id - Continuous Drain Current

28.8 A

Typical Turn-Off Delay Time

30 ns

RoHS

Details

Rds On - Drain-Source Resistance

85 mOhms

Tradename

SiC FET

Qg - Gate Charge

23 nC

Brand

UnitedSiC

Manufacturer

UnitedSiC

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

800

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

190 W

Vgs th - Gate-Source Threshold Voltage

6 V

Typical Turn-On Delay Time

31 ns, 33 ns

Moisture Sensitive

有

Vds - Drain-Source Breakdown Voltage

1.2 kV

操作温度

-55°C ~ 175°C (TJ)

系列

-

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

105mOhm @ 20A, 12V

输入电容(Ciss)(Max)@Vds

754 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 12 V

上升时间

7 ns, 6 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±25V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET